Implantation site of rare earths in single-crystalline ZnO
نویسندگان
چکیده
The lattice location of rare earth Er in single-crystalline hexagonal ZnO was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor isotope Tm at doses of 1.3−2.8×10 cm and annealing up to 900°C, the angular distribution of conversion electrons emitted by the radioactive isotope Er was measured by a position-sensitive electron detector. The conversion electron emission patterns from Er around the [0001], [1102], [1101] and [2113] directions give direct evidence that the large majority of Er atoms (75-90%) occupies substitutional Zn sites.
منابع مشابه
research publications and other research outputs Defect studies of ZnO films prepared by pulsed laser deposition on various substrates
ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20-100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous su...
متن کاملpublications and other research outputs Defect studies of ZnO films prepared by pulsed laser deposition on various substrates
ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20-100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous su...
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ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20-100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous su...
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